High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 105 hours

We report on technology, performance and reliability of state-of-the-art AlGaN/GaN MMICs for space applications. Our quarter-micron gate length HEMTs have breakdown voltages beyond 150 V and deliver 5 W/mm output power density at 30 V drain bias with 50% PAE at 10 GHz operating frequency. Packaged two-stage MMICs with 8 W output power for telemetry applications have a PAE above 40% with a lifetime above 10
⁵
h at a channel temperature of 200°C. Initial space evaluation tests indicate a suitable stability of our technology in space.