Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications

This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al
_0.3
Ga
_0.7
As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.