Critical Current Properties of FF-MOD RE123 Thin Films Sintered for Short Time

Optimizations of sintering conditions, such as
$P\hbox{O}_{2}$
, temperature and time, and the introduction of effective pinning centers were systematically studied to improve the critical current properties of RE123 thin films prepared by fluorine-free (FF) metal organic decomposition (MOD) method. We found that epitaxial growth of Y123 in FF-MOD is extremely fast. Effects of dilute Ga doping, RE mixing, and introduction of
$\hbox{BaHfO}_{3}$
fine particles on flux pinning properties were examined. Dilute Ga doping enhanced
$J_{\rm c}$
at low temperature in high magnetic field regardless of sintering conditions, while
$\hbox{BaHfO}_{3}$
precipitates improved
$J_{\rm c}$
at 77 K. In addition, introduction of undoped Y123 seed layer was found to dramatically improve crystallinity of doped or RE-mixed films. Moreover, high epitaxial growth rate of RE123 was maintained for these films.