Ultra high speed sub-micron gallium arsenide VLSI

Over the past few years there has been a steady progress in the development of digital GaAs technologies providing VLSI complexity to the high speed system designers. The improvements in the fabrication process have resulted in the emergence of over one million transistor GaAs technologies to support ultra high speed data rates. The purpose of this paper is to show the current state of the technology for high speed data and telecommunication circuits requiring VLSI complexity. The issues covered are the Logic gate design and impact of algorithm on performance. An adder circuit configuration is also presented to give an indication of the speed and power dissipation at higher levels of integration.