A general physical model for short-channel double-gate SOI MOSFETS

Previous works on the modeling of short-channel double-gate devices in the above-threshold regime were based mainly on modifying the current expressions for bulk devices. These models would probably be of limited utility because they do not account for the central physical characteristic of the double-gate devices, namely the coupling of the two channels. In this paper, we present a general physical model which explicitly accounts for physical effects such as channel coupling and drain induced conductance enhancement (DICE). The model is a major extension of the single-gate SOI MOSFET model to the double-gate case.