Graphene for microelectronics: Can it make a difference?

Benchmarking figures for graphene show remarkable properties like ballistic conductance over several hundred nanometers or charge carrier mobilities of several 100.000 cm
²
/Vs [1, 2]. When graphene is integrated and processed, however, defects in the graphene and its dielectric environment dominate device performance [3, 4]. Furthermore, the lack of a band gap limits the applicability of graphene field effect transistors (GFETs) for logic applications. Yet, there are many options for graphene to make a difference in the future of microelectronics, many of which can be attributed to the “More than Moore” domain defined in the ITRS. These will be discussed in this talk.