A High Gain 600 GHz Amplifier TMIC Using 35 nm Metamorphic HEMT Technology

In this paper, we are presenting two terahertz monolithic integrated circuits (TMICs) for use in next-generation radar and spectroscopy systems operating in the WR-1.5 waveguide band (500 - 750 GHz). Both amplifier circuits have been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with a benzocyclobutene (BCB) encapsulation to minimize the device parasitics. Furthermore, airbridge type transmission lines (ABTL) and grounded coplanar circuit topology (GCPW) were applied, leading to a compact chip size and excellent gain performance in the submillimeter-wave frequency regime beyond 500 GHz. A realized six-stage ABTL amplifier circuit demonstrated a small-signal gain of more than 20 dB between 502 and 516 GHz, while a six-stage grounded coplanar TMIC achieved a linear gain of 20.3 dB at 610 GHz and more than 18 dB over the bandwidth from 557 to 616 GHz. The total chip size of both submillimeter-wave amplifier circuits was only 0.15 mm
²
.