Large reflectivity modulation using InGaAs-GaAs

The first reflection modulator using electroabsorption in strained InGaAs-GaAs quantum wells is reported. With an insertion loss of 1.9 dB and a reflectivity change of 42% at room temperature, the modulator is comparable to the best devices reported in GaAs-Al-GaAs system. A framework is presented for examining the tradeoff between insertion loss and modulation ratio from a theoretical perspective and compare the predicted limits to reported devices.<
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