Low noise characteristics of a GaAs-AlGaAs multiple-quantum-well semiconductor laser amplifier

Low noise characteristics are experimentally demonstrated in a multiple-quantum-well laser amplifier. The measured noise figure of a GaAs-AlGaAs traveling-wave laser amplifier at a 20 dB signal gain was found to be 4.6 dB. This is the smallest value reported for semiconductor laser amplifiers. A signal gain of 20 dB was obtained at a low bias current of 23.5 mA.<
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