Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition

Broad-area (W=150 μm) single-quantum-well (SQW) lasers have been successfully fabricated on n-type In/sub 0.03/Ga/sub 0.97/As substrates without incorporating aluminum-containing alloys. The strained-layer InGaP-GaAs-InGaAs heterostructure was grown by atmospheric pressure metalorganic chemical vapor deposition. Due to both the increased substrate lattice constant and the partial strain compensation supplied by the tensile-strained GaAs optical guiding layers, a peak emission wavelength of 1.1403 μm is obtained for a 1-mm cavity length.