The optical response of epitaxial lift-off HEMT's to 140 GHz

We present measurements on the optical frequency response of epitaxial lift-off (ELO) 1.0-/spl mu/m InP high-electron mobility transistors (HEMTs) to 140 GHz using electrooptic sampling and heterodyne techniques. Our picosecond sampling measurements established that the lift-off devices exhibited substantial optical response to 140 GHz. Heterodyne measurements made at 60 and 94 GHz later confirmed these findings. A novel three wave mixing technique was used to extend the heterodyne bandwidth to 130 GHz. In these experiments, millimeter waves were generated in our optically driven HEMT's and launched into waveguides. These lift off devices can be major additions to future millimeter wave integrated optoelectronic systems either as high frequency optical detectors or as optically driven tunable millimeter wave sources.