AlGaN/GaN MISHEMTs With High-$\kappa \ \hbox{LaLuO}_{3}$ Gate Dielectric

A high-
$\kappa\ \hbox{LaLuO}_{3}$
(LLO) thin film is successfully incorporated into AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO–AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high
$I_{\rm ON}/I_{\rm OFF}$
of
$\hbox{10}^{9}$
, a maximum drain current of 820 mA/mm at
$V_{\rm GS} = 3\ \hbox{V}$
, a peak transconductance
$(G_{m})$
of
$\sim$
192 mS/mm, and a steep subthreshold slope
$(SS)$
of
$\sim$
73 mV/dec.