AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multi-quantum well (MQW)+TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW+multiquantum barrier (MQB) AlGaInP LED's. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.