A 0.2–2.6 GHz Wideband Noise-Reduction Gm-Boosted LNA

This letter presents a wideband low-noise amplifier (LNA) which utilizes g
_m
-boosted and noise-reduction techniques. The proposed DC-coupled 2-stage LNA employs an error amplifier to cancel the DC-offset voltage between the differential DC-coupled paths. The LNA is implemented in 90-nm digital CMOS technology. Within 0.2-2.6 GHz wideband applications, the LNA achieves 24 dB voltage gain, 1.9-2.9 dB NF, - 3 dBm IIP3. The core power of the LNA draws 9 mA from 1V supply voltage and occupies 0.046 mm
²
.