Effects of the thickness on the dielectric reliability of multilayered BaTiO/sub 3/ insulating layer

The dielectric reliability of the multilayered BaTiO/sub 3/ thin films with different thickness was studied by TZDB and TDDB techniques. The surface roughness and the composition of the thin films were investigated by AFM and AES. The results indicate that TZDB behavior is related to the roughness of the surface of the multilayered BaTiO/sub 3/ thin films and TDDB characteristics as well as the quantity of the leakage current may be explained in terms of the formation and thickness of the transition region.