A unified silicon/silicon carbide IGBT model

A new physics-based IGBT compact model has been developed for circuit simulation of silicon (Si) or silicon carbide (SiC) devices. The model accurately predicts the steady-state output, transfer and switching characteristics of the IGBT under a variety of different conditions. This is the first IGBT model to predict the behavior of p-channel SiC IGBTs. Previous work on IGBT models has focused on Si n-channel IGBTs [1]. The unified model is not limited to SiC p-channel IGBTs; the user has the option to select between Si or SiC, and n-channel or p-channel, making it the first IGBT model that captures the physics of all of these device and material types. The model also accounts for temperature effects, often referred to as temperature scaling. The model have been experimentally validated up to 125 °C for silicon and 300 °C for SiC. Validation of n-channel and p-channel devices for both Si and SiC was accomplished by fitting the steady-state characteristics and inductive load switching transient waveforms. 15-kV p-channel IGBTs supplied by Cree were among those used for validation. The fitting was achieved using Certify, a software tool developed at the University of Arkansas. A parameter extraction recipe for the model was developed for simple parameter extraction using data that are readily available from datasheets. That fitting tool is available to the public through the National Center for Reliable Electric Power Transmission website (ncrept.eleg.uark.edu). The model and parameter extraction recipe will also be made available to the public through NCREPT.