Insulation protection of high-power GaAs photoconductive switch

An all-solid insulation technique for surface protection of high-voltage lateral GaAs photoconductive switch has been reported in this paper. Multilayer transparent dielectrics as passivation and insulation protection materials are deposited and coated on the surface of the GaAs switch. Optimal geometry of the planar ohmic contacts was calculated. The ideal dark I-V characteristics of fabricated devices was observed. The hold-off field strength reaches 35 kv/cm.