The high resistivity properties of tungsten nitride thin films deposited by RF&DC sputtering

We investigated the high resistivity properties of tungsten and tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the resistivity and sheet resistivity. The properties of the resistivity and sheet resistivity of these films measured under various conditions. Resistivity and sheet resistance analyzed the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these resistivities were depend on the temperature of substrate, gas flow rate and RF power. Very high and low resistivity of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the resistivities of these films increased.