Abstract:
Thin-film transistors (TFTs) that use hydrogenated nanocrystalline-silicon (nc-Si) as the channel material are favorable for use in neuromorphic circuits [1] as well as i...Show MoreMetadata
Abstract:
Thin-film transistors (TFTs) that use hydrogenated nanocrystalline-silicon (nc-Si) as the channel material are favorable for use in neuromorphic circuits [1] as well as in flat-panel displays. Nanocrystalline-Si can be deposited over large areas at low temperatures, thus enabling three-dimensional integration with CMOS structures. Recently, nc-Si TFTs that exhibit high channel mobility and provide stable operation under voltage bias stress have been fabricated [2]. In this work, the subthreshold swing, electron and hole threshold voltages (VT), and field-effect mobilities are considerably improved by using high-K dielectrics instead of SiO2. These gains will translate to circuits with lower operating voltages at the same performance.
Date of Conference: 07-09 December 2011
Date Added to IEEE Xplore: 19 January 2012
ISBN Information: