Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity

The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in metal-oxide-semiconductor (MOS) structures. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices results in good agreement with the dose rate calculations of interface trap buildup.