Characterization and Modeling of Atomic Layer Deposited High-Density Trench Capacitors in Silicon

A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited
Al
₂
O
₃
and
TiN
is presented. It is shown that in situ ozone annealing of the
Al
₂
O
₃
layers prior to the
TiN
electrode deposition significantly improves the electric properties of the devices such as the dielectric constant, leakage current, and the breakdown voltage of the devices. The self-inductance and self-resistance of the capacitors as derived from
S
-parameter measurements up to 10 GHz are very small, as low as 4 pH and 6 mΩ for 19.1 mm
²
electrode surface. These data are shown to be consistent with a theoretical model.