Wideband limit study of a GaN power amplifier using two-tone measurements

This paper studies the wideband limit (WBL) of a GaN RF power amplifier (PA). The WBL study is achieved by a PA characterization using two-tone measurements. The characterization method allows to identify the dependency of PA memory effects on the two-tone frequency spacing. PA memory effects (MEs) are measured using the opening in the AM/AM and AM/PM curves and they were found to be located in a limited range of tone spacings. The outcome of this characterization procedure is the identification of the PA wideband limit defined as the upper limit of the MEs frequency range. The most interesting phenomenon related to the WBL is that for all tone spacings beyond the WBL the AM/AM curves of the PA collapse to a quasi-static case, which is different from the static case. The presence of the wideband limit is not so evident from AM/PM curves, where the phase loop is not collapsing beyond WBL. The wideband limit is an important aspect of the DUT behaviour and can be used to improve the accuracy of the DUT behavioral model identifying its memory range.