High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

In this letter, we report load pull measurements on SiGe HBTs at 94 GHz. Nowadays, this kind of device exhibits
F
_MAX
above 400 GHz and thus has a growing interest for W-band applications. A load pull test bench is developed for the characterization of this device with special care on architecture and calibration procedure for accurate measurements in 75-110 GHz. The device was characterized under large signal operation showing attractive performance for power amplifier design. A state-of-the-art power density of 18.5 mW/μm
²
at 1-dB compression has been obtained at 94 GHz.