U- and V-band signal sources in Si/SiGe technology

A U-band VCO and a V-band push-push frequency doubler are designed in a 0.25 µm SiGe:C BiCMOS technology. The VCO oscillates from 48GHz to 55 GHz, with an output power of around −1dBm and a phase noise of −84 dBc/Hz at 1MHz offset. The push-push frequency doubler has a minimum loss of 12 dB at 50 GHz for an input power of 6 dBm. It achieves an output power of −2.4dBm at 50 GHz and −5.8 dBm at 75GHz for an input power of 10 dBm. The VCO is biased at 4V consuming 36 mA, and the push-push doubler draws 9.4mA from a 2V supply.