Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes

In this paper, the transition wavelength and wave function overlap of type-II In
x
Ga
1−x
As/GaAs
1−y
Sb
y
quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelength from 2μm to 4μm can be achieved with a symmetric strain compensated quantum well structure. For these structures, the transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers.