Copper Germanium alloys formation by low temperature atomic hydrogen treatment

The behavior of the two-layer thin-film Cu/Ge system deposited on i-GaAs substrate at treatment in atomic hydrogen was investigated. It was found that such processing in an atomic hydrogen flow with density 10
¹⁵
at. cm
²
s
^-1
at room temperature for 5 min leads to the solid state interdiffusion of Cu and Ge thin films and poly-crystalline CuGe alloy formation with the vertically oriented grains.