Temperature performance of 1.55 /spl mu/m vertical cavity lasers with integrated InP/GaInAsP Bragg reflector

Long wavelength vertical cavity lasers (VCL) have gained considerable interest after the first continuous wave (CW) room temperature (RT) operating devices were fabricated. As a potential light source for future optical communication systems, they offer a number of advantages such as array fabrication, on-chip-testability, cost effective fabrication, and effective fiber coupling. We fabricated 1.55 /spl mu/m laser diodes based on an integrated GaInAsP/InP mirror. Here we focus on the temperature sensitivity, especially of the threshold current as a function of the gain offset (cavity tuning).