1.3 µm dilute nitride HELLISH-VCSOAs

The operational characterisation of Hot Electron Light Emitting and Lasing in Semiconductor Heterojunction (HELLISH) vertical cavity semiconductor optical amplifier (VCSOA) is reported. The device is designed for 1.3 μm operation and based on Ga
_0.35
In
_0.65
N
_0.02
As
_0.08
/GaAs multiple quantum wells (MQWs), is assessed using spectral photoluminescence (PL), electroluminescence (EL) and spectral electro-photoluminescence (EPL) techniques under different optical and electrical excitation conditions. Significant amplification of the emitted signal is reported.