Improved method for the extraction of oxide charge density and centroid from the current-voltage characteristic shifts in a MOS structure after uniform gate stress

A new method for the extraction of the oxide charge density and distribution centroid based on an improved DiMaria approach including the tunnel transparency modification due to the charge build up has been developed. The comparison with the conventional DiMaria procedure confirms the physical consistency of the new approach and enables a 20-30% improvement in the oxide charge density assessment for dielectrics as thin as 5-9 nm.