Layered GaTe crystals for radiation detectors

In this work we investigated a new method of growing detector grade large GaTe layered chalcogenide single crystals. GaTe ingots (2" diameter) were grown by a novel method using graphite crucible by slow crystallization from a melt of high purity (7N) Ga and Te precursors in an argon atmosphere. GaTe samples from the monocrystalline area of the ingot have been cleaved mechanically and characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis by x-rays (EDAX), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), transmission line matrix method (TLM), resistivity measurements using van der Pauw technique, Hall Effect, and Capacitance-Voltage measurements. Our investigations reveal high potential for developing superior quality GaTe crystals using this growth technique for growing large volume inexpensive GaTe single crystals for nuclear radiation detectors.