Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x/

Ohmic minority and majority drift mobilities as well as saturation velocities are reported for unstrained and strained Si/sub 1-x/Ge/sub x/ alloys up to z=0.31. The electron-transport model is verified by measurements of the in-plane majority drift mobility in strained Si/sub 1-x/Ge/sub x/ samples for various dopant and Ge concentrations. Saturation velocities are determined by full-band Monte Carlo simulations. There is no substantial decrease in the mobility perpendicular to the Si/SiGe interface for doping concentrations above 10/sup 19/ cm/sup -3/ and growing x. In contrast, the saturation-drift velocity is strongly reduced with x.