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Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by Using Full Wafer Bonding | VDE Conference Publication | IEEE Xplore

Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by Using Full Wafer Bonding

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Abstract:

We summarize results on the processing and characterization of current injected 1.55 micrometer single- and multi-microring lasers including vertical active/passive waveg...Show More

Abstract:

We summarize results on the processing and characterization of current injected 1.55 micrometer single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GaInAsP/InP-GaAs full-wafer bonding using a BCB interface.
Date of Conference: 16-20 September 2007
Date Added to IEEE Xplore: 01 June 2011
Print ISBN:978-3-8007-3042-1
Conference Location: Berlin, Germany

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