A simple physically based model of temperature effect on drain current for nanoscale TFET

Temperature dependency of ballistic double gate tunnel field effect transistors (TFET) have been examined for the first time using Si and GaAs as channel material. I-V characteristics have been simulated using Kane's model of band-to-band tunneling (BTBT). It has been found that off current is more sensitive to temperature variation than on current. Moreover, this temperature dependency is also a function of device scaling which has been discussed in the present work. Besides a simple physical based model has been proposed that can predict the drain current with temperature over wide range (250K - 500 K for Si and 300K- 450K for GaAs).