Nanowire zero-capacitor DRAM transistors with and without junctions

This paper shows the applicability of the JunctionsLess (JL) Multiple-Gate MOSFET (MuGFET) structure to capacitor-less one-transistor dynamic random access memory (1T-DRAM) applications and compares it with the more conventional inversion-mode (IM) MuGFET. The JL-MuGFET has advantages over the IM MuGFETs for 1T-DRAM in that it has a very low leakage current and a low avalanche breakdown voltage due to the lack of junctions in the structure.