Modification of the Einstein equations of majority- and minority-carriers with band gap narrowing effect in n-type degenerate silicon with degenerate approximation and with non-parabolic energy bands

A new idea is presented for a modification of Einstein equations of the majority- and minority-carriers with the band gap narrowing effect in an n-type degenerate and uniformly-doped silicon with degenerate approximation and with nonparabolic energy bands. It may imply that the Einstein equation may be one factor for the increase of the minority-carrier diffusion coefficient at high doping levels.