Porous low k structural design to meet next generation interconnect needs

As porous low k films are integrated for 45nm/32nm and extend into 22nm/16nm technology nodes, there is a need for more rigorous structural design of porous low k films to meet the integration challenges. This paper demonstrates the ability to tune porous low k films and discusses the impact of these choices to subsequent integration steps such as etch, ash and wet clean processes. Balancing carbon content in the film to minimize damage needs to be coupled with improving mechanical properties for packaging compatibility. By tuning the porous low k deposition process, these properties can be balanced.