The stochastic based model of monolithic active inductor

In this research, the model which describes the stochastic effect of the bias current to the inductance of the monolithic active inductor has been proposed. The model can accurately capture the stochastic behavior of the resulting inductance with sufficient confidence. This research has been performed based upon the up to dated CMOS technology. The proposed model is applicable to any CMOS monolithic active inductor. Hence, it has been found to be a convenience tool for the design of various active inductor based applications.