Reducing Rext in laser annealed enhancement-mode In0.53Ga0.47As surface channel n-MOSFET

High mobility, narrow band gap group IV and III-V materials are strong contenders to replace strained-Si channels for logic applications beyond the 16 nm node [1-3]. While there are many research efforts evaluating III-V channels in HEMT and MOSFET forms, model based understanding and control of the FET properties such as channel mobility, series resistance, and off-state leakage are still lacking [4-8]. In this work, we address the aforementioned issues, by investigating laser annealing to control thermal budget and lower series resistance. Additionally we also report on preliminary material analysis and demonstrate the low temperature measurement to the performance of In
_0.53
Ga
_0.47
As MOSFETs. The electrical and material characteristics of TaN/ZrO
₂
/In
_0.53
Ga
_0.47
As self-aligned n-MOSFETs with high I
_on
/I
_off
(> 5 × 10
⁴
), high mobility (~ 3000 cm /V·sec) and promise for low R
_ext
are presented and discussed.