Dynamic properties of a 1.3 /spl mu/m light-emission-and-detection (LEAD) diode with a high mesa semi-insulating BH for subscriber TCM transmission

This paper describes the dynamic properties of a 1.3 /spl mu/m light-emission-and-detection (LEAD) diode that has a high mesa semi-insulating buried heterostructure (SI-BH) to reduce the capacitance of the chip (0.6-0.8 pF). A modulation bandwidth of 12 GHz in laser diode (LD) operation and a detection bandwidth of about 2 GHz in photodetector (PD) operation are achieved using a chip and a module, respectively. In bit error rate (BER) performance at 30 Mb/s, a receiver sensitivity (BER=10/sup -8/) of -40.2 dBm is confirmed, and switching characteristics of under 1 /spl mu/s from LD to PD operation are estimated by circuit simulation.