TiW/Cu/TiW interconnection lines patterned by IR-assisted RIE

This paper presents a new Cu-metallization technology which consists of TiW/Cu/TiW film structure formation and the followed IR-assisted RIE. It is demonstrated that line structure Cu lines, which have low electrical resistivity and high EM resistance, are obtained without peeling. Further, MOS diodes and MOSFETs using these lines have fine characteristics and they are stable up to 700/spl deg/C annealing.