Characteristics of silicon n/sup +/-n/sup -/-n/sup +/ diode with sub-micrometer n/sup -/ region

In this paper, the I-V characteristics of silicon n/sup +/-n/sup -/-n/sup +/ diode are investigated as a parameter of the length of the n/sup -/ region. This diode with shorter n/sup -/ region than 1 /spl mu/m has the ohmic characteristics until reaching high electric field in spite of the existence of numerous space-charges in the n/sup -/ region, for the first time in this report. This conductance of the diode is inversely proportional to the third power of the length of the n/sup -/ region. The experimental results are in good agreement with an analytical calculation including the diffusion term of carriers injected from the n+ regions to the n/sup -/ region. However, the diode with longer n/sup -/ region than 2 /spl mu/m shows the space-charge-limited conduction which is the same as earlier reports.