Low-Frequency Noise in Vertical InAs Nanowire FETs

This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and $\hbox{HfO}_{2}$ high-$\kappa$ dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power $S_{I}/I_{d}^{2}$ measures $ \hbox{7.3} \times \hbox{10}^{-7}\ \hbox{Hz}^{-1}$. Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be $\hbox{4.2} \times \hbox{10}^{-3}$.