Substrate Influences on the Activation of Ion-Implanted Si in GaAs

The influence of substrate material on Si-implanted CV-profiles is demonstrated on s.i. LEC grown GaAs. Local activation is affected by stoichiometry variations near dislocations. For higher concentrations the variations increase due to saturation effects. By co-implantation of As and enhanced implantation damage the activation is decreased and the dislocation influence increased.