Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO
_x
-2nm InP) in the In
_0.7
Ga
_0.3
As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (t
_OXE
) and low gate leakage (J
_G
) and (ii) effective carrier confinement and high effective carrier velocity (V
_eff
) in the QW channel. The L
_G
=75nm In
_0.7
Ga
_0.3
As QWFET on Si with this composite high-K gate stack achieves high transconductance of 1750¿S/¿m and high drive current of 0.49mA/¿m at V
_DS
=0.5V.