Engineering of strained III–V heterostructures for high hole mobility

Strain and confinement leads to reduction in m* to numbers comparable with electron mass in III-V's. Room temperature mobility of 960/860cm
²
/Vs for In
_0.41
Ga
_0.59
Sb/GaSb channels (N
_S
=1×10
¹²
/cm
²
) are the highest reported for these materials. ¿h is > 3X compared to uniaxially strained Si. Further enhancement should be possible using uniaxial strain (Fig. 3). High ¿h Sb-based channels along with their already reported excellent n-channel performance make them promising candidates to meet ITRS requirements for future nodes.