A look at the phenomenon of charge multiplication in silicon radiation detector within the concept of dynamic focusing of the electric field

The spectra of /sup 34/S and /sup 40/Ar ions measured with silicon detectors were analyzed within the concept of dynamic focusing of the electric field. The ionization constant b was obtained for different fields. An estimation of the hot electrons temperature was carried out. A reasonable scenario for the development of charge multiplication process is suggested, taking into account the influence of initial electron-hole concentration on the formation of the hot carriers subsystem.