Incorporation of As Into Vapor-Grown Ge

The incorporation of arsenic into single-crystal germanium grown by the disproportionation of GeI
2
was studied using As
⁷⁶
as a radioactive tracer, and using measurements of the Hall effect. The deposition was carried out in a sealed tube using as source material a single crystal of Ge doped to 2.5 × 10
¹⁹
atoms/cm
³
with As. It was found that all the As incorporated into the vapor-grown Ge was electrically active, at least for material grown on a (211) Ge seed. The concentration of As in the deposited Ge was lower than that in the source, and appeared to depend on the crystallographic orientation of the growing face.