Gallium Arsenide Planar Technology

Some of the main problems of the gallium arsenide planar technology are discussed. The most suitable starting material used has been obtained by vapor growth. Methods of zinc and tin diffusion have been studied in connection with masking by pyrolytic SiO
2
/P
2
O
5
layers. An alternative technique using doped silicon dioxide for the production of planar devices has been developed. The latter method features complete surface protection and easy control of the impurity concentration. The application of both methods to the production of npn, pnp, and four-layer devices is described. Using an epitaxial etch-refill technique it is possible to obtain electrically isolated devices on a common semi-insulating GaAs substrate.