Metallization Processes in Fabrication of Schottky-barrier FET's

The metallization processes necessary for the production of microwave Schottky-barrier field-effect transistors are described. Since the gate contact is only 1 micrometer wide, the holes and the metallization of the source, drain and gate contacts are produced simultaneously. Then in a subsequent process, the source and drain contacts are converted to ohmic contacts by the evaporation of Au-Sb onto these contacts. Mask alignment is not a problem because the Au-Sb spreads across the surface after suitable heat treatment.