Application of laser annealing in the EU FP6 project D-DotFET

Full-melt high-power excimer laser annealing is investigated as a means of activating implanted source/drain regions in a MISFET structure, which could be positioned on a SiGe dot in such a manner that strain is transferred to the channel region. Such a ¿DotFET¿ device is the focus of the EU FP6 project D-DotFET. A MISFET structure fabricated at suitably low processing temperatures, below 400°C, is demonstrated with a metal/high-k gate-stack that is self-aligned to laser-annealed S/D regions.